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Secondary Electron Emission Contrast of Quantum Wells in GaAs pin Junctions (Articolo in rivista)

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Secondary Electron Emission Contrast of Quantum Wells in GaAs pin Junctions (Articolo in rivista) (literal)

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Alternative label

Enrique Grunbaum , Zahava Barkay, Yoram Shapira, Keith W.J. Barnham, David B. Bushnell, Nicholas J. Ekins-Daukes, Massimo Mazzer and Peter Wilshaw (2009)
Secondary Electron Emission Contrast of Quantum Wells in GaAs pin Junctions
in Microscopy and microanalysis (Internet); CAMBRIDGE UNIV PRESS, 32 AVENUES OF THE AMERICAS, NEW YORK, NY 10013-2473 (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Enrique Grunbaum , Zahava Barkay, Yoram Shapira, Keith W.J. Barnham, David B. Bushnell, Nicholas J. Ekins-Daukes, Massimo Mazzer and Peter Wilshaw (literal)

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http://journals.cambridge.org/action/displayAbstract;jsessionid=FF6F07C8A230F021175E2373813EC2F9.journals?fromPage=online&aid=4908400 (literal)

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Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Tel-Aviv 69978, Israel Wolfson Applied Materials Research Centre, Tel-Aviv University, Tel-Aviv 69978, Israel Department of Physics, Imperial College of Science, Technology & Medicine, London SW7 2BW, UK Department of Materials, Parks Road, University of Oxford, Oxford OK1 3PH, UK CNR-IMEM (literal)

Titolo

Secondary Electron Emission Contrast of Quantum Wells in GaAs pin Junctions (literal)

Abstract

The secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution. The intrinsic region is shown to be pinned to the Fermi level. Additional SE contrast mechanisms are discussed in relation to the dopant regions themselves as well as the AlGaAs window at the p-region. A novel method of in situ observation of the SE profile changes resulting from reverse biasing these structures shows that the built-in potential may be deduced. The obtained value of 0.7 eV is lower than the conventional bulk value due to surface effects. (literal)

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