Microwave Inter-Connections and Switching by means of Carbon Nano-tubes (Articolo in rivista)

Type
Label
  • Microwave Inter-Connections and Switching by means of Carbon Nano-tubes (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.5772/50953 (literal)
Alternative label
  • Giorgio De Angelis, Andrea Lucibello, Emanuela Proietti, Romolo Marcelli, Daniele Pochesci, Giancarlo Bartolucci, Mircea Dragoman and Daniela Dragoman (2011)
    Microwave Inter-Connections and Switching by means of Carbon Nano-tubes
    in Nanomaterials and Nanotechnology
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giorgio De Angelis, Andrea Lucibello, Emanuela Proietti, Romolo Marcelli, Daniele Pochesci, Giancarlo Bartolucci, Mircea Dragoman and Daniela Dragoman (literal)
Pagina inizio
  • 65 (literal)
Pagina fine
  • 78 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.intechopen.com (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 1 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 14 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM UOS Roma Thales Alenia Space IMT Bucuresti, Romania (literal)
Titolo
  • Microwave Inter-Connections and Switching by means of Carbon Nano-tubes (literal)
Abstract
  • In  this  work,  carbon  nanotube  (CNT)  based  interconnections  and  switches  will  be  reviewed,  discussing  the  possibility  to  use  nanotubes  as  potential  building  blocks  for  signal  routing  in  microwave  networks.  In  particular,  theoretical  design  of  coplanar  waveguide  (CPW),  micro-strip  single-pole-single-throw  (SPST)  and  single-pole-double-throw  (SPDT)  devices  has  been  performed  to  predict  the  electrical  performances  of  CNT-based  RF  switching  configurations.  Actually,  by  using  the  semiconductor-conductor  transition  obtained  by  properly  biasing  the  CNTs,  an  isolation  better  than  30  dB can be obtained between the ON and OFF states of the  switch  for  very  wide  bandwidth  applications.  This  happens  owing  to  the  shape  deformation  and  consequent  change  in  the  band-gap  due  to  the  external  pressure  caused  by  the  electric  field.  State-of-art  for  other  switching techniques based on CNTs and their use for RF  nano-interconnections  is  also  discussed,  together  with  current issues in measurement techniques.  (literal)
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