Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices (Articolo in rivista)

Type
Label
  • Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Virgilio, M; Grosso, G (2007)
    Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices
    in Nanotechnology (Bristol. Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Virgilio, M; Grosso, G (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 18 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Pisa, Dipartimento Fis E Fermit, INFM, CNR,NEST, I-56127 Pisa, Italy (literal)
Titolo
  • Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices (literal)
Abstract
  • We show theoretically that it is possible to design SiGe-based quantum well structures in which conduction intersubband transitions are induced by normal incidence infrared radiation. A sp(3)d(5)s* tight binding model has been adopted to evaluate the electronic states and optical transitions between lowest conduction confined states of a superlattice composed of one pure Ge quantum well separated by SiGe alloys, grown along the [001] direction. We find that significant optical coupling between confined states in the Ge wells is achieved at normal incidence radiation by the off-diagonal elements of the mass tensor. The minimum energy Ge conduction valleys are, in fact, tilted with respect to the [001] growth axis. For comparison we show that no such coupling can be realized for the conduction states confined in a similar structure composed by Si quantum wells because the ellipsoids of the lowest conduction valleys are oriented along the growth direction. (literal)
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