Low temperature deposition of SiNx thin films by the LPCVD method (Comunicazione a convegno)

Type
Label
  • Low temperature deposition of SiNx thin films by the LPCVD method (Comunicazione a convegno) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Tijani?, Z., Risti?, D., Ivanda, M., Bogdanovi?-Rakovi?, I., Marciu?, M., Risti?, M., Gamulin, O., Musi?, S., Furi?, K., Chiasera, A., Ferrari, M., Righini, G.C. (2011)
    Low temperature deposition of SiNx thin films by the LPCVD method
    in MIPRO 2011 - 34th International Convention on Information and Communication Technology, Electronics and Microelectronics, Opatija (Croatia), 23-27 May 2011
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Tijani?, Z., Risti?, D., Ivanda, M., Bogdanovi?-Rakovi?, I., Marciu?, M., Risti?, M., Gamulin, O., Musi?, S., Furi?, K., Chiasera, A., Ferrari, M., Righini, G.C. (literal)
Pagina inizio
  • 23 (literal)
Pagina fine
  • 24 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • MIPRO 2011 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ruder Bo?kovi? Institute, Bijenika cesta 54, 10000 Zagreb, Croatia; CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alia Cascata 56/C, Povo, 38123 Trento, Italy; Medical School, Department of Physics and Biophysics, University of Zagreb, ?alata 3b, 10 000, Zagreb, Croatia; MDF Lab, Nello Carrara Institute of Applied Physics (IFAC-CNR), Via Madonna del Piano 10, 50019 Sesto Fiorentino, Firenze, Italy (literal)
Titolo
  • Low temperature deposition of SiNx thin films by the LPCVD method (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 9789532330670 (literal)
Abstract
  • Thin silicon rich nitride (SiNx) films were deposited using the LPCVD (Low Pressure Chemical Vapor Deposition) method. Films with the different values of the nitrogen content were deposited by varying the ratio of the flows of ammonia and silane in the horizontal tube reactor. The films were characterized in terms on the surface quality (by scanning electron microscopy), in terms of the nitrogen content x by time of flight elastic recoil detection analysis and by Raman and FTIR spectroscopy. (literal)
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