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In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors (Contributo in atti di convegno)

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In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors (Contributo in atti di convegno) (literal)

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M Felici, A Polimeni, F Masia, R Trotta, G Pettinari, M Capizzi, G Salviati, L Lazzarini, N Armani, F Martelli, M Lazzarino, G Bais, M Piccin, S Rubini, A Franciosi, Mariucci L (2007)
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors
in 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna (Austria), Jul 24-28, 2006
(literal)

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M Felici, A Polimeni, F Masia, R Trotta, G Pettinari, M Capizzi, G Salviati, L Lazzarini, N Armani, F Martelli, M Lazzarino, G Bais, M Piccin, S Rubini, A Franciosi, Mariucci L (literal)

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Conference: 28th International Conference on the Physics of Semiconductors (ICPS-28) Location: Vienna, AUSTRIA Date: JUL 24-28, 2006 Sponsor(s): Austrian Res Ctr; Infineon; Austrian Fed Minist Educ, Sci & Culture; FFG; Austrian Nano Initiat; Vienna Convent Bur; ICPS 27; Marabun Res; Raith; Int Union Pure & Appl Phys; NMA Networking; Austrian Soc Micro & Nanoelect; Austrian Airlines; Inst Phys; Austriamicrosystems; Agilent Technologies; NIST; LOT ORIEL; Panasonic; ONR Off Naval Res; Volkswagen; USAF Off Sci Res, European Off Aerosp Res & Dev, USAF Res Lab; Darpa (literal)

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PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006 (literal)

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1 CNISM and Dipartimento di Fisica, Universita' di Roma \"La Sapienza \", P.le A. Moro 2, 00185 Roma, Italy; 2 IMEM-CNR, Parco Area delle Scienze 37/A, Localita' Fontanini, 43010 Parma, Italy; 3 TASC-INFM, Area Science Park, 34012 Trieste, Italy; 4 IFN-CNR, Via Cineto Romano 42, 00156 Roma, Italy. (literal)

Titolo

In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors (literal)

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Abstract

We present two different methods to pattern the band gap of dilute nitrides in their growth plane by exploiting the unique capability of H to passivate N in these materials. By deposition of metallic masks on and subsequent H irradiation of GaAs1-xNx, we artificially create zones of the crystal having the band gap of untreated GaAs1-xNx well surrounded by GaAs-like barriers. Alternatively, by focusing an energetic e(-)-beam on the surface of hydrogenated GaAs1-xNx we displace H atoms from their N passivation sites, thus leading to a controlled decrease in the crystal band gap in the spatial region where the e(-)-beam is steered. (literal)

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