Interface Study in a \"Metal/High-k\" Gate Stack: Tantalum Nitride on Hafnium Oxide (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Interface Study in a \"Metal/High-k\" Gate Stack: Tantalum Nitride on Hafnium Oxide (Contributo in atti di convegno) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.2981591 (literal)

Alternative label

• C. Gaumer, E. Martinez, S. Lhostis, C. Wiemer, M. Perego, V. Loup, D. Lafond, J.-M. Fabbri (2008)
  Interface Study in a "Metal/High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide
  in 214th Meeting of the Electrochemical-Society, Honolulu, OCT 13-15, 2008
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• C. Gaumer, E. Martinez, S. Lhostis, C. Wiemer, M. Perego, V. Loup, D. Lafond, J.-M. Fabbri (literal)

Pagina inizio

• 99 (literal)

Pagina fine

• 110 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 16 (literal)

Rivista

• ECS transactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• STMicroelectronics, F-38926 Crolles, France MINATEC, CEA, LETI, F-38054 Grenoble, France CNR, INFM, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy (literal)

Titolo

• Interface Study in a \"Metal/High-k\" Gate Stack: Tantalum Nitride on Hafnium Oxide (literal)

Abstract

• In this work, we investigate the crystalline structure and the chemical properties of a \"metal / high-k\" gate stack with TaN as the gate electrode and HfO(2) as the dielectric. We show that a 3nm-thick layer of HfO(2) is crystallized when it is integrated whereas it is amorphous as deposited. Increasing the TaN thickness increases the amount of the TaN crystalline FCC phase. Concerning the gate stack chemistry, oxygen and nitrogen diffusion between the layers is shown. This occurs during the gate electrode deposition for all TaN thicknesses. We show that the gate stacks which use thick TaN layers are not chemically stable under the spike anneal used for dopant activation, since oxygen and nitrogen diffusion is increased by this thermal treatment. Gate stacks with a thin TaN layer exhibit a high chemical stability under annealing. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ECS transactions (Rivista)