DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS (Contributo in atti di convegno) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/IRPS.2009.5173279 (literal)

Alternative label

• Garros, X ; Casse, M ; Fenouillet-Beranger, C ; Reimbold, G ; Martin, F ; Gaumer, C ; Wiemer, C ; Perego, M; Boulanger, F (2009)
  DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS
  in 47th Annual IEEE International Reliability Physics Symposium, Monreal, APR 26-30, 2009
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Garros, X ; Casse, M ; Fenouillet-Beranger, C ; Reimbold, G ; Martin, F ; Gaumer, C ; Wiemer, C ; Perego, M; Boulanger, F (literal)

Pagina inizio

• 362 (literal)

Pagina fine

• 366 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• 2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• STMicroelectronics, F-38926 Crolles, France MINATEC, CEA, LETI, F-38054 Grenoble, France CNR, INFM, Lab Nazl MDM, I-20041 Agrate Brianza, MI, Italy (literal)

Titolo

• DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS (literal)

Abstract

• A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility degradations and NBTI, but, also strongly enhances PBTI, due to a complex set of reactions in the gate oxide. An optimum gate thickness must be found to obtain an acceptable trade off between device performance and reliability requirements. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MICHELE PEREGO (Unità di personale interno)
• CLAUDIA WIEMER (Persona)

Insieme di parole chiave

• Keywords of "DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Persona)
• MICHELE PEREGO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Insieme di parole chiave di

• Keywords of "DETRIMENTAL IMPACT OF TECHNOLOGICAL PROCESSES ON BTI RELIABILITY OF ADVANCED HIGH-K/METAL GATE STACKS" (Insieme di parole chiave)