http://www.cnr.it/ontology/cnr/individuo/prodotto/ID233764

Strain-compensated InGaAs/InGaAs quantum well cell with 2 micron band-edge (Contributo in atti di convegno)

Type

Label

Strain-compensated InGaAs/InGaAs quantum well cell with 2 micron band-edge (Contributo in atti di convegno) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Carsten Rohr, Paul Abbott, Ian Ballard, James P Connolly, Keith WJ Barnham, Lucia Nasi, Claudio Ferrari, Laura Lazzarini, Massimo Mazzer, John Roberts (2003)
Strain-compensated InGaAs/InGaAs quantum well cell with 2 micron band-edge
in 5th Conference on Thermophotovoltaic Generation of Electricity, Rome, Italy, Sept. 16-19, 2002
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Carsten Rohr, Paul Abbott, Ian Ballard, James P Connolly, Keith WJ Barnham, Lucia Nasi, Claudio Ferrari, Laura Lazzarini, Massimo Mazzer, John Roberts (literal)

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

Conference: 5th Conference on Thermophotovoltaic Generation of Electricity Location: ROME, ITALY Date: SEP 16-19, 2002 Sponsor(s): USA, CECOM; USA, Off Res (European Off); Natl Renewable Energy Lab; US DOE; NASA Glenn Res Ctr (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

1 Experimental Solid State Physics, Blackett Laboratory, Imperial College London, SW7 2BW, U.K.; 2 CNR-IMEM, Parco Area delle Scienze 37/A, 43010 Fontanini-Parma, Italy; 3 CNR-IMM, University of Lecce, 73100 Lecce, Italy; 4 EPSRC III-V Facility, University of Sheffield, Sheffield S1 3JD, U.K. (literal)

Titolo

Strain-compensated InGaAs/InGaAs quantum well cell with 2 micron band-edge (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

Abstract

Strain-compensated Quantum Well Cells (QWCs) have been shown to extend the absorption to longer wavelengths than attainable with lattice-matched material, while retaining a similar or better dark current. This is of particular interest for thermophotovoltaic (TPV) applications with low temperature sources where low energy bandgaps are required, for example in combination with a Holmia emitter of 1.95 mum peak emission. Here we report on a two quantum well In0.74Ga0.26As/In0.36Ga0.64As device which absorbs out to 2040 rim, as observed by cathodoluminescence. Our modelling of the spectral response, including quantum and strain effects, is also consistent with this result. We show that the material quality measured by transmission electron microscopy (TEM) is excellent, exhibiting sharp interfaces. However, the electrical properties under illumination are less encouraging: At room temperature not all carriers are collected in forward bias. We present results on the field and temperature dependence of carrier escape and collection. (literal)

Editore