Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (Contributo in atti di convegno) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.3569935 (literal)

Alternative label

• L. Lamagna, A. Molle, C. Wiemer, S. Spiga, C. Grazianetti, M. Fanciulli (2011)
  Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates
  in ECS
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• L. Lamagna, A. Molle, C. Wiemer, S. Spiga, C. Grazianetti, M. Fanciulli (literal)

Pagina inizio

• 431 (literal)

Pagina fine

• 440 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 35 (literal)

Rivista

• ECS transactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio MDM, IMM-CNR, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Milano, Italy (literal)

Titolo

• Atomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates (literal)

Abstract

• We have investigated the atomic layer deposition (ALD) on III-V substrates (i.e., GaAs and In0.53Ga0.47As) of Al-doped ZrO2 (Al-ZrO2) films. The aim is to benefit from TMA-based chemistry as adopted in the ALD of Al2O3 and to boost the dielectric constant of the stack. An in situ monitoring of the process with spectroscopic ellipsometry was carried out in order to address the formation of the first few monolayers of the films. The correlation with the structural and chemical characterization provides insights about the interface composition upon ALD. The electrical performances of capacitors fabricated on In0.53Ga0.47As including Al-ZrO2 as gate dielectric exhibits encouraging properties compared to those acquired for Al2O3. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)
• SABINA SPIGA (Persona)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ECS transactions (Rivista)