Thermal resistance at the Al-Ge2Sb2Te5 interface (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Thermal resistance at the Al-Ge2Sb2Te5 interface (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4803923 (literal)

Alternative label

• J.-L. Battaglia, V. Schick, C. Rossignol, A. Kusiak, I. Aubert, A. Lamperti, C. Wiemer (2013)
  Thermal resistance at the Al-Ge2Sb2Te5 interface
  in Applied physics letters (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• J.-L. Battaglia, V. Schick, C. Rossignol, A. Kusiak, I. Aubert, A. Lamperti, C. Wiemer (literal)

Pagina inizio

• 181907 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 102 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratory I2M, University of Bordeaux, UMR CNRS 5295, 351 cours de la lib?eration, 33405 Talence Cedex, France Laboratorio MDM, IMM-CNR, Unit?a di Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy (literal)

Titolo

• Thermal resistance at the Al-Ge2Sb2Te5 interface (literal)

Abstract

• Ge2Sb2Te5 is a phase change material candidate to constitute the active element of future nonvolatile memory devices. The evolution of the thermal resistance at the interface between an aluminum thin layer and Ge2Sb2Te5 is studied using the time resolved pump probe technique from room temperature to 400 ?C. The thermal resistance is influenced by the amorphous to crystalline phase change occurring in Ge2Sb2Te5. The decrease in the thermal resistance from the amorphous to the crystalline phase is well explained by the diffuse mismatch model asymptotic form for high temperature. The large increase of the interface thermal resistance between fcc and hcp crystalline states is explained by the fast and significant grain growth and species inter-diffusion during this second phase change. This leads to the formation of an interfacial layer whose chemical and mechanical intrinsic properties have been measured in order to model the thermal resistance in the hcp state (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALESSIO LAMPERTI (Unità di personale interno)
• CLAUDIA WIEMER (Persona)

Incoming links:

Autore CNR di

• CLAUDIA WIEMER (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)