Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/cm203362d (literal)

Alternative label

• Luca Lamagna, Claudia Wiemer, Michele Perego, Sabina Spiga, Jesu?s Rodríguez, David Santiago Coll, Maria Elena Grillo, Sylwia Klejna, Simon D. Elliott (2012)
  Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces
  in Chemistry of materials (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Luca Lamagna, Claudia Wiemer, Michele Perego, Sabina Spiga, Jesu?s Rodríguez, David Santiago Coll, Maria Elena Grillo, Sylwia Klejna, Simon D. Elliott (literal)

Pagina inizio

• 1080 (literal)

Pagina fine

• 1090 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 24 (literal)

Rivista

• Chemistry of materials (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy IVIC, Ctr Quim, Caracas 1020A, Venezuela Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland (literal)

Titolo

• Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces (literal)

Abstract

• The atomic layer deposition (ALD) of aluminum oxide (Al2O3) from trimethylaluminium and water on silicon nitride was studied on as-received and HF-cleaned Si3N4 surfaces. In situ spectroscopic ellipsometry during ALD, X-ray photoelectron spectroscopy, X-ray reflectivity, and time-of-flight secondary ion mass spectrometry were used to elucidate the growth rate, the chemical composition, and the density of Al2O3. The effect of the substrate cleaning and of the growth temperature -varied in the 150-300 degrees C range-were analyzed by considering first-principles calculations of the early stages of the growth on both Si3N4 and SiO2 surfaces. Our work evidenced how not only complete ALD cycles but also complementary non-ALD reactions can account for the observed peculiarities related to the enhanced or inhibited growth rates on the Si3N4 surfaces as a function of temperature. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• SABINA SPIGA (Persona)
• MICHELE PEREGO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Chemistry of materials (Rivista)

Insieme di parole chiave di

• Keywords of "Mechanisms for Substrate-Enhanced Growth during the Early Stages 2 of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces" (Insieme di parole chiave)