Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4731746 (literal)

Alternative label

• S. Spiga, R. Rao, L. Lamagna, C. Wiemer, G. Congedo, A. Lamperti, A. Molle, M. Fanciulli, F. Palma, F. Irrera (2012)
  Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode
  in Journal of applied physics (online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• S. Spiga, R. Rao, L. Lamagna, C. Wiemer, G. Congedo, A. Lamperti, A. Molle, M. Fanciulli, F. Palma, F. Irrera (literal)

Pagina inizio

• 014107 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 1122 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Lab MDM, I-20864 Agrate Brianza, MB, Italy Univ Roma La Sapienza, Informat Elect & Commun Dept, I-00184 Rome, Italy Univ Roma La Sapienza, IUNET, I-00184 Rome, Italy Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy (literal)

Titolo

• Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode (literal)

Abstract

• Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 degrees C. Correspondingly, the dielectric constant (k) value increases from 20+/-1 to 27+/-2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2 (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• CLAUDIA WIEMER (Unità di personale interno)
• SABINA SPIGA (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)

Insieme di parole chiave

• Keywords of "Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• CLAUDIA WIEMER (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode" (Insieme di parole chiave)