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Low temperature electric transport properties in hydrogenated microcrystalline silicon films (Articolo in rivista)
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- Label
- Low temperature electric transport properties in hydrogenated microcrystalline silicon films (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Ambrosone, G; Coscia, U; Cassinese, A; Barra, M; Restello, S; Rigato, V; Ferrero, S (2007)
Low temperature electric transport properties in hydrogenated microcrystalline silicon films
in Thin solid films (Print)
(literal)
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- Ambrosone, G; Coscia, U; Cassinese, A; Barra, M; Restello, S; Rigato, V; Ferrero, S (literal)
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- ISI Web of Science (WOS) (literal)
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- Univ Napoli Federico II, Dipartimento Sci Fisiche, CNISM, Naples, Italy; Univ Napoli Federico II, CNR INFM Coherentia, Naples, Italy; Lab Nazl Legnaro, Ist Nazl Fis Nucl, I-35020 Legnaro, Italy; Dipartimento Fis Politecn, I-10129 Turin, Italy (literal)
- Titolo
- Low temperature electric transport properties in hydrogenated microcrystalline silicon films (literal)
- Abstract
- The dark conductivity of microcrystalline silicon (mu c-Si:H) films, deposited in a RF-PECVD system varying the RF power in the 15-100 W range, has been investigated as a function of the temperature. Under low electric field condition (10(3) V/cm), the conductivity of the samples as a function of the exponential of T-1/4 presents a linear behaviour in the measured temperature range. The density of states near the Fermi level, the range of hopping and the activation energy for hopping have been evaluated using the diffusion model. A correlation between the hopping parameters and the crystallinity degree has been found. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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