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Step height oscillations during layer-by-layer growth of Pb on Ge(001) (Articolo in rivista)

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Step height oscillations during layer-by-layer growth of Pb on Ge(001) (Articolo in rivista) (literal)

Anno

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Alternative label

A. Crottini,[1,3] D. Cvetko,[1,2] L. Floreano,[1] R. Gotter,[1] A. Morgante,[1,3] and F. Tommasini[1,3] (1997)
Step height oscillations during layer-by-layer growth of Pb on Ge(001)
in Physical review letters (Print); The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
(literal)

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A. Crottini,[1,3] D. Cvetko,[1,2] L. Floreano,[1] R. Gotter,[1] A. Morgante,[1,3] and F. Tommasini[1,3] (literal)

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[1] Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, 34012 Trieste, Italy [2] Physics Department, University of Ljubljana, Slovenia [3] Physics Department, University of Trieste, Italy (literal)

Titolo

Step height oscillations during layer-by-layer growth of Pb on Ge(001) (literal)

Abstract

Heteroepitaxial growth of Pb on the Ge(001) surface has been studied by He atom scattering. For low substrate temperatures, Pb is found to grow layer by layer with (111) orientation. A detailed analysis of the specular peak profile as a function of the He wave vector reveals that the step height of the growing monatomic terraces oscillates with the him thickness. This variation, initially as large as +/-15% around the value of the Pb(Ill) bulk interlayer spacing, gradually dampens out after the deposition of a dozen monolayers. This is direct evidence of quantum size effects affecting the interlayer distance of a growing metal film. (literal)

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