X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source (Articolo in rivista)

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  • X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source (Articolo in rivista) (literal)
Anno
  • 1999-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/(SICI)1521-396X(199911)176:1<671::AID-PSSA671>3.0.CO;2-E (literal)
Alternative label
  • M. Sauvage-Simkin, Y. Garreau, A. Barski, R. Langer, D. Cvetko, L. Floreano,[5] R. Gotter,[5] A. Santaniello, A. Verdini[5] (1999)
    X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source
    in Physica status solidi. A, Applied research; Wiley-VCH Verlag Gmbh, Weinheim (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Sauvage-Simkin, Y. Garreau, A. Barski, R. Langer, D. Cvetko, L. Floreano,[5] R. Gotter,[5] A. Santaniello, A. Verdini[5] (literal)
Pagina inizio
  • 671 (literal)
Pagina fine
  • 676 (literal)
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  • 176 (literal)
Rivista
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  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [1] Ctr Univ Orsay, LURE, F-91898 Orsay, France [ 2 ] Lab Mineral Cristallog, F-75252 Paris 05, France [ 3 ] CEA, Dept Rech Fondamentale SP2M, F-38054 Grenoble, France [ 4 ] Sincrotrone Trieste SCPA, I-34012 Trieste, Italy [ 5 ] INFM, TASC, I-34012 Trieste, Italy [ 6 ] Univ Ljubljana, Dept Phys, Ljubljana 61000, Slovenia (literal)
Titolo
  • X-ray photoelectron spectroscopic investigation of the GaAs nitridation mechanism with an ECR plasma source (literal)
Abstract
  • The mechanism of arsenic replacement by nitrogen to produce beta-GaN in GaAs(001) samples exposed to the flux of an electron cyclotron resonance (ECR) plasma source is discussed on the basis of core level photoemission and photodiffraction data collected in situ. An amorphisation step is clearly evidenced which could favour nitrogen incorporation but should be kept at a minimum in order to maintain a cubic crystallographic template to stabilize-the Ga-N bonds into epitaxial beta-GaN. (literal)
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