Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (Articolo in rivista)

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Label
  • Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.433-436.673 (literal)
Alternative label
  • F. Moscatelli, A. Scorzoni, A. Poggi, G. C. Cardinali and R. Nipoti (2003)
    Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data
    in Materials science forum; TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Moscatelli, A. Scorzoni, A. Poggi, G. C. Cardinali and R. Nipoti (literal)
Pagina inizio
  • 673 (literal)
Pagina fine
  • 676 (literal)
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  • Congresso data SEP 02-25, 2002 Congresso luogo LINKOPING, SWEDEN Congresso nome 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002) Congresso relazione Contributo Congresso rilevanza Internazionale Curatore/i del volume Peder Bergman and Erik Janzén Titolo del volume Silicon Carbide and Related Materials - 2002 (literal)
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  • http://www.scientific.net/MSF.433-436.673 (literal)
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  • Silicon Carbide and Related Materials - 2002 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 433-436 (literal)
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  • 433-436 (literal)
Rivista
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • DIEI di Perugia, 06131 Perugia, Italy CNR-IMM di Bologna, via Gobetti 101, 40129 Bologna, Italy (literal)
Titolo
  • Al/Ti Ohmic Contacts to P-type Ion Implanted 6H-SiC: Mono- and Two-dimensional Analysis of the TLM Data (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Peder Bergman and Erik Janzén (literal)
Abstract
  • This paper deals with the electrical characterization of low resistance Al-Ti 70/30 wt.% ohmic contacts to a p-type ion implanted 6H-SiC layer. Transmission Line Model (TLM) structures were realized on the top of mesa islands defined in the ion implanted layer. A metal scheme composed of Al-1%Si(350nm)/Ti(80nm) was deposited by sputtering, photolitography defined and annealed at 1000degreesC in Ar for 2 min. Contact resistance was measured from in-line TLM structures as a function of the temperature in the range 25-290degreesC. The TLM data were analyzed by both the usual one-dimensional model and a more realistic 2-dimensional finite difference simulation tool that takes into account the current crowding effect at the contact periphery. Extracted contact resistivity values fall in the low range of data from the literature. (literal)
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