http://www.cnr.it/ontology/cnr/individuo/prodotto/ID230513
From nano-voids to blisters in hydrogenated amorphous silicon (Contributo in volume (capitolo o saggio))
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- From nano-voids to blisters in hydrogenated amorphous silicon (Contributo in volume (capitolo o saggio)) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Alternative label
C. Frigeri 1, L. Nasi 1, M. Serényi 2, N. Q. Khánh 2, Zs. Szekrényes3 , K. Kamarás 3, A. Csik 4 (2013)
From nano-voids to blisters in hydrogenated amorphous silicon
World Scientific, Singapore (Singapore) in Physics, Chemistry and Application of Nanostructures, 2013
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- C. Frigeri 1, L. Nasi 1, M. Serényi 2, N. Q. Khánh 2, Zs. Szekrényes3 , K. Kamarás 3, A. Csik 4 (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
- Proceedings of International Conference Nanomeeting - 2013
Minsk, Belarus, 28 - 31 May 2013 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- Physics, Chemistry and Application of Nanostructures (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1 CNR-IMEM Institute, Parco Area delle Scienze 37/A, Parma 43100, Italy; 2 Institute of Technical Physics and Materials Science, Research Centre for Natural Sciences, Hungarian Academy of Sciences, P.O. Box 49, Budapest H-1525, Hungary; 3 Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, Budapest H-1525, Hungary; 4 Institute of Nuclear Research of the Hungarian Academy of Sciences, P.O. Box 51, Debrecen H-4001, Hungary. (literal)
- Titolo
- From nano-voids to blisters in hydrogenated amorphous silicon (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-981-4460-17-0 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- V. E. Borisenko, S. V. Gaponenko, V. S. Gurin and C. H. Kam (literal)
- Abstract
- AFM and FTIR spectroscopy were applied to study the relationship between surface
blisters and nanovoids in annealed hydrogenated a-Si. The influence of the H bonding
configuration on the way the nanovoids give rise to the blisters is discussed. Annealing
causes an increase of the polymers density. As they reside on the voids walls their density
increase causes an increase of the voids volume. The polymers may release H inside the
voids with creation of H2 gas, whose expansion, upon annealing, further contributes to the
volume increase of the voids till the formation of surface blisters. (literal)
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