Integration of Niobium-Doped Lead Zirconate Titanate on Bare Silicon Wafer by Electrophoretic Deposition (EPD) (Abstract/Comunicazione in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Abstract/Comunicazione in atti di convegno (Classe)

Label

• Integration of Niobium-Doped Lead Zirconate Titanate on Bare Silicon Wafer by Electrophoretic Deposition (EPD) (Abstract/Comunicazione in atti di convegno) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Alternative label

• Baldisserri, Carlo; Gardini, Davide; Galassi, Carmen (2012)
  Integration of Niobium-Doped Lead Zirconate Titanate on Bare Silicon Wafer by Electrophoretic Deposition (EPD)
  in COST MPO904 Action "Single-and multiphase ferroics and multiferroics with restricted geometries" & IEEE-ROMSC 2012, IASI Romania, 24- 26 September 2012
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Baldisserri, Carlo; Gardini, Davide; Galassi, Carmen (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• ID_PUMA: cnr.istec/2012-A6-006. Area di valutazione: 09 - Ingegneria industriale e informatica (literal)

Note

• Abstract (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-ISTEC, Faenza (literal)

Titolo

• Integration of Niobium-Doped Lead Zirconate Titanate on Bare Silicon Wafer by Electrophoretic Deposition (EPD) (literal)

Abstract

• It was recently found in this laboratory that neat lead zirconate titanate (PZT)/silicon stacks can be produced by electrophoretic deposition (EPD) on bare silicon wafers followed by sintering at 850-950°C. EPD is an easily implemented deposition technique that requires only basic laboratory gear and a sufficiently stable colloidal suspension to produce ceramic and electroceramic films with thickness in the 100 nm-10 mm range3. It has been found that the EPD of niobium-doped lead zirconate titanate (PZTN), performed in ethanol-based suspensions of PZT on bare silicon wafers on which Al/Si alloyed ohmic contacts were made, produced smooth green films that strongly pinned to the silicon substrate after sintering. Thick and well-adhered sintered PZT films on silicon having thickness about 50 µm were thus obtained. Such structures could be the core of novel on-chip sensors/actuators. The results of the production of thick PZT films by EPD and sintering and some characterizations of the same are reported. (literal)

Prodotto di

• Institute of science and technology for ceramics (ISTEC) (Istituto)
• Processi e materiali per applicazioni elettromeccaniche (SP.P02.009.001) (Modulo)

Autore CNR

• DAVIDE GARDINI (Unità di personale interno)
• CARLO BALDISSERRI (Unità di personale interno)
• CARMEN GALASSI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Integration of Niobium-Doped Lead Zirconate Titanate on Bare Silicon Wafer by Electrophoretic Deposition (EPD)" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute of science and technology for ceramics (ISTEC) (Istituto)
• Processi e materiali per applicazioni elettromeccaniche (SP.P02.009.001) (Modulo)

Autore CNR di

• CARMEN GALASSI (Unità di personale interno)
• DAVIDE GARDINI (Unità di personale interno)
• CARLO BALDISSERRI (Unità di personale interno)

Insieme di parole chiave di

• Parole chiave di "Integration of Niobium-Doped Lead Zirconate Titanate on Bare Silicon Wafer by Electrophoretic Deposition (EPD)" (Insieme di parole chiave)