Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (Contributo in atti di convegno)

Type
Label
  • Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (Contributo in atti di convegno) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • F Giannazzo, E Bruno, S Mirabella, G Impellizzeri, E Napolitani, V Raineri, F Priolo, D Alquier, (2005)
    Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si
    in 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F Giannazzo, E Bruno, S Mirabella, G Impellizzeri, E Napolitani, V Raineri, F Priolo, D Alquier, (literal)
Pagina inizio
  • 395 (literal)
Pagina fine
  • 399 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 108-109 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy Univ Catania, MATIS, INFM, I-95123 Catania, Italy Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy Univ Padua, MATIS, INFM, I-34131 Trieste, Italy Univ Tours, LMP, F-37071 Tours 2, France (literal)
Titolo
  • Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 3-908451-13-2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Pichaud, B; Claverie, A; Alquier, D; Richter, H; Kittler, M (literal)
Abstract
  • In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 degrees C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it