http://www.cnr.it/ontology/cnr/individuo/prodotto/ID230163
Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (Contributo in atti di convegno)
- Type
- Label
- Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (Contributo in atti di convegno) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Alternative label
F Giannazzo, E Bruno, S Mirabella, G Impellizzeri, E Napolitani, V Raineri, F Priolo, D Alquier, (2005)
Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si
in 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005), Giens, FRANCE, SEP 25-30, 2005
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F Giannazzo, E Bruno, S Mirabella, G Impellizzeri, E Napolitani, V Raineri, F Priolo, D Alquier, (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IMM, Sez Catania, I-95121 Catania, Italy
Univ Catania, MATIS, INFM, I-95123 Catania, Italy
Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
Univ Padua, MATIS, INFM, I-34131 Trieste, Italy
Univ Tours, LMP, F-37071 Tours 2, France (literal)
- Titolo
- Effect of self-interstitials - nanovoids interaction on two-dimensional diffusion and activation of implanted B in Si (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- Pichaud, B; Claverie, A; Alquier, D; Richter, H; Kittler, M (literal)
- Abstract
- In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 degrees C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer. (literal)
- Editore
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Editore di
- Insieme di parole chiave di