Growth of diborides thin films on different substrates by pulsed laser ablation (Articolo in rivista)

Type
Label
  • Growth of diborides thin films on different substrates by pulsed laser ablation (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2006.04.008 (literal)
Alternative label
  • Ferrando, V; Tarantini, C; Manfrinetti, P; Pallecchi, I; Salvato, M; Ferdeghini, C (2006)
    Growth of diborides thin films on different substrates by pulsed laser ablation
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ferrando, V; Tarantini, C; Manfrinetti, P; Pallecchi, I; Salvato, M; Ferdeghini, C (literal)
Pagina inizio
  • 1439 (literal)
Pagina fine
  • 1444 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 515 (literal)
Rivista
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, LAMIA, Dipartimento Fis, I-16146 Genoa, Italy; CNR, INFM, LAMIA, Dipartimento Chim & Chim Ind, I-16146 Genoa, Italy; Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy; CNR, INFM, Lab Reg SuperMat, I-84081 Baronissi, Italy (literal)
Titolo
  • Growth of diborides thin films on different substrates by pulsed laser ablation (literal)
Abstract
  • The growth of scandium, titanium and zirconium diborides thin films by pulsed laser ablation technique on different substrates has been studied. In situ reflection high energy electron diffraction and ex situ X-ray diffraction analyses indicate that the films are strongly c-axis oriented on all the substrates and also epitaxial, apart from Si(111), where the in plane orientation is poor. Atomic force microscopy imaging reveals a flat surface in all the epitaxial samples, with roughness lower than 1 nm. The results on silicon carbide and sapphire are very promising for using these materials as buffer layers in magnesium diboride thin films growth, especially to improve epitaxy and to prevent oxygen diffusion from the substrate, and also to study the influence of lattice strain on MgB2 critical temperature. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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