Amorphous to nanocrystalline transition in the plasma deposition of silicon films from SiF4-H2-He (Contributo in atti di convegno)

Type
Label
  • Amorphous to nanocrystalline transition in the plasma deposition of silicon films from SiF4-H2-He (Contributo in atti di convegno) (literal)
Anno
  • 1998-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. Cicala1, P. Capezzuto2 and Bruno1 (1998)
    Amorphous to nanocrystalline transition in the plasma deposition of silicon films from SiF4-H2-He
    in XIVth Europhysics Sectional Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG-XIV), Malahide, (Ireland), August 1998
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Cicala1, P. Capezzuto2 and Bruno1 (literal)
Pagina inizio
  • 466 (literal)
Pagina fine
  • 467 (literal)
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  • XIVth Europhysics Sectional Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG-XIV), Proceedings (literal)
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  • 22H (literal)
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  • 22H (literal)
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  • 2 (literal)
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  • 1Centro di Studio per la Chimica dei Plasmi CNR, Via Orabona, 4-70126 Bari, Italy; 2Dipartimento di Chimica Universita` di Bari, Via Orabona, 4-70126 Bari, Italy (literal)
Titolo
  • Amorphous to nanocrystalline transition in the plasma deposition of silicon films from SiF4-H2-He (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Europhysics Conference Abstracts is published by European Physical Society 1998 (literal)
Abstract
  • Nowadays, there is a renewed interest in the investigation of the silicon plasma deposition processes because in many electronic devices better performances can be achieved with nanocrystalline silicon (nc-Si) as active layers instead of amorphous films (a-Si:H). In this work, we focused our interest on how to favour the amorphous to crystalline transition during silicon deposition from SiF4-H2-He plasmas. Nanocrystalline phase increases, when He is added to SiF4-H2 mixture because the F atom etching of the amorphous phase is enhanced. The r.f. power variation is used as external parameter to determine the relative importance of F and SiFx radicals for etching and deposition, respectively. (literal)
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