Design, fabrication, and testing of an integrated Si-based light modulator (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Design, fabrication, and testing of an integrated Si-based light modulator (Contributo in atti di convegno) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• A. Sciuto, S. Libertino, S. Coffa (2003)
  Design, fabrication, and testing of an integrated Si-based light modulator
  in Conference on Laser Diodes, Optoelectronic Devices and Heterogenous Integration, Brugge (Belgio), OCT 29-31, 2002
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Sciuto, S. Libertino, S. Coffa (literal)

Pagina inizio

• 74 (literal)

Pagina fine

• 77 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Laser Diodes, Optoelectronic Devices and Heterogenous Integration (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 4947 (literal)

Rivista

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)

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• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR IMETEM, Stradale Primosole 50, 95121 Catania, Italy STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy (literal)

Titolo

• Design, fabrication, and testing of an integrated Si-based light modulator (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 0-8194-4742-0 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

• AA.VV. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• A. Driessen, R. G. Baets, J. G. McInerney, E. Suhir (literal)

Abstract

• The implementation of efficient Si optical functions has attracted a considerable interest in the last years since it would allow the use of Si technology for the realisation of integrated optoelectronic (OE) devices. We have fabricated and characterised a novel Si-based light modulator working at the standard communication wavelength of 1.54 mum. It consists of a three terminal Bipolar Mode Field Effect Transistor (BMFET) integrated in a silicon rib waveguide realised on epitaxial (epi) Si wafers. The optical channel of the modulator is embodied within its vertical electrical channel. Light modulation is obtained through the formation of a plasma of carriers, inside the optical channel, that produces an increase of the absorption coefficient. Modulation is achieved by moving the plasma inside and outside the optical channel by properly changing the bias of the control electrode. The devices have been fabricated using clean room processes fully compatible with ULSI technology. Electrical characterisation shows a strong channel conductivity modulation. Optical measurements confirm the plasma formation in the channel. The distribution of the plasma under different bias conditions has been directly derived from Emission Microscopy analysis. The devices exhibit modulation depths ranging from 68% up to 83% depending on the bias conditions. (literal)

Prodotto di

• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SEBANIA LIBERTINO (Unità di personale interno)
• ANTONELLA SCIUTO (Unità di personale interno)

Incoming links:

Autore CNR di

• SEBANIA LIBERTINO (Unità di personale interno)
• ANTONELLA SCIUTO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi sensori in tecnologia planare (MD.P05.023.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Proceedings of SPIE, the International Society for Optical Engineering (Rivista)