Structural and electrical characterization of gold nanoclusters in thin SiO2 films: Realization of a nanoscale tunnel rectifier (Articolo in rivista)

Type
Label
  • Structural and electrical characterization of gold nanoclusters in thin SiO2 films: Realization of a nanoscale tunnel rectifier (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ruffino, F; Grimaldi, MG (2007)
    Structural and electrical characterization of gold nanoclusters in thin SiO2 films: Realization of a nanoscale tunnel rectifier
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ruffino, F; Grimaldi, MG (literal)
Pagina inizio
  • 532 (literal)
Pagina fine
  • 537 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 84 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)
Titolo
  • Structural and electrical characterization of gold nanoclusters in thin SiO2 films: Realization of a nanoscale tunnel rectifier (literal)
Abstract
  • Conductive atomic force microscopy has been used to measure the I-V characteristics of nanometric An clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I-V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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