Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method (Articolo in rivista)

Type
Label
  • Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • M. Ivanda, H. Gebavi, D. Ristic, K. Furic, S. Music, M. Ristic, S. Zonja, P. Biljanovic, O. Gamulin, M. Balarin, M. Montagna, M. Ferrari, and G. C. Righini (2007)
    Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method
    in Journal of molecular structure (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Ivanda, H. Gebavi, D. Ristic, K. Furic, S. Music, M. Ristic, S. Zonja, P. Biljanovic, O. Gamulin, M. Balarin, M. Montagna, M. Ferrari, and G. C. Righini (literal)
Pagina inizio
  • 461 (literal)
Pagina fine
  • 464 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 834 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • M. Ivanda, H. Gebavi, D. Ristic, K. Furic, S. Music, M. Ristic - Ruder Boskovic Institute, P.O. Box 180, 10002 Zagreb, Croatia S. Zonja, P. Biljanovic - Faculty for Electrotechnic and Computing, University of Zagreb, Unska 3, 10000 Zagreb, Croatia O. Gamulin, M. Balarin - Medical School, Department of Physics and Biophysics, University of Zagreb, Salata 3b, 10000, Zagreb, Croatia M. Montagna - Dipartimento di Fisica, Università di Trento and INFM, I-38050 Povo, Trento, Italy M. Ferrari - Instituto di Fotonica e Nanotechnologie, CSMFO group, Via Sommarive 14, Trento, I-38050 Trento, Italy G. C. Righini - Department of Optoelectronics and Photonics, Nello Carrara Institute of Applied Physics, IFAC – CNR, Via Panciatichi 64, I-50127 Firenze, Italy (literal)
Titolo
  • Silicon nanocrystals by thermal annealing of Si-rich silicon oxide prepared by the LPCVD method (literal)
Abstract
  • The Si-rich silicon oxide (SiOx) thin films are prepared on silicon crystalline substrates by low pressure chemical vapor deposition (LPCVD) method. The oxygen concentration x are controlled by the ratio of the partial pressures of N2O and SiH4 gases in the reaction chamber. In order to induce the phase separation on SiO2 and Si nanostructures the samples are annealed at the temperatures 900–1100 °C. The structural and optical properties of the samples are investigated by Raman and infrared spectroscopy and scanning electron microscopy. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it