Defects creation under UV irradiation of PbWO4 crystals. (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Defects creation under UV irradiation of PbWO4 crystals. (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1093/rpd/nci580 (literal)

Alternative label

• P. Bohacek; P. Fabeni; A. Krasnikov; M. Nikl; G. P. Pazzi; C. Susini; S. Zazubovich (2006)
  Defects creation under UV irradiation of PbWO4 crystals.
  in Radiation protection dosimetry
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• P. Bohacek; P. Fabeni; A. Krasnikov; M. Nikl; G. P. Pazzi; C. Susini; S. Zazubovich (literal)

Pagina inizio

• 164 (literal)

Pagina fine

• 167 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• Selected and revised paper from 14th International Conference on Solid State Dosimetry Location: New Haven, CT Date: JUN 27-JUL 02, 2004 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://rpd.oxfordjournals.org/content/119/1-4/164 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 119 (literal)

Rivista

• Radiation protection dosimetry (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-4 (literal)

Note

• Google Scholar (literal)
• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague, Czech Republic Institute of Applied Physics, Via Panciatichi 64, 50127 Florence, Italy Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia (literal)

Titolo

• Defects creation under UV irradiation of PbWO4 crystals. (literal)

Abstract

• A systematic study of photo thermally stimulated defects creation processes is carried out by the thermally stimulated luminescence (TSL) method for a large number of undoped and doped PbWO4 crystals under irradiation at 80-180 K in the 3.4-4.3 eV energy range. The activation energy Ea for the regular exciton state disintegration is found to be about 0.1 eV. For defect-related states disintegration, Ea varies in the crystals studied from 0.03 to 0.36 eV. The origin of the defect-related states is discussed. The conclusion is made that not only a release of charge carriers but also charge transfer processes take place under UV irradiation of PbWO4 crystals. (literal)

Prodotto di

• Institute of applied physics \"Nello Carrara\" (IFAC) (Istituto)
• Processi ottici classici e quantistici in sistemi fisici innovativi (MD.P03.016.001) (Modulo)

Autore CNR

• PASQUALE FABENI (Unità di personale interno)
• GIAN PAOLO PAZZI (Persona)
• CARLO SUSINI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Defects creation under UV irradiation of PbWO4 crystals." (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIAN PAOLO PAZZI (Persona)
• CARLO SUSINI (Unità di personale interno)
• PASQUALE FABENI (Unità di personale interno)

Prodotto

• Institute of applied physics \"Nello Carrara\" (IFAC) (Istituto)
• Processi ottici classici e quantistici in sistemi fisici innovativi (MD.P03.016.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Radiation protection dosimetry (Rivista)

Insieme di parole chiave di

• Keywords of "Defects creation under UV irradiation of PbWO4 crystals." (Insieme di parole chiave)