Plasma deposition of a-Si,Ge:H,F thin films from SiF4-GeH4 -H2 mixtures (Articolo in rivista)

Type
Label
  • Plasma deposition of a-Si,Ge:H,F thin films from SiF4-GeH4 -H2 mixtures (Articolo in rivista) (literal)
Anno
  • 1989-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1557/JMR.1989.0366 (literal)
Alternative label
  • Bruno G., Capezzuto P., Cicala G., Cramarossa F. (1989)
    Plasma deposition of a-Si,Ge:H,F thin films from SiF4-GeH4 -H2 mixtures
    in Journal of materials research
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Bruno G., Capezzuto P., Cicala G., Cramarossa F. (literal)
Pagina inizio
  • 366 (literal)
Pagina fine
  • 372 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Centro di Studio per la Chimica dei Plasmi, C. N. R., Università di Bari, Via G. Amendola, 173, 70126 Bari, Italy (literal)
Titolo
  • Plasma deposition of a-Si,Ge:H,F thin films from SiF4-GeH4 -H2 mixtures (literal)
Abstract
  • The deposition of hydrogenated and fluorinated silicon-germanium alloys (Si1-xGex:H,F) by glow discharge decomposition of silicon tetrafluoride (SiF4) and germane (GeH4) mixtures has been studied. Optical emission spectroscopy (OES), for the analysis of the emitting species in plasma phase, and mass spectroscopy (MS) for the analysis of the stable species, are used for the plasma diagnostics. In addition, in situ measurements of the deposition rate by laser interferometry are performed. A series of alloys with germanium content ranging from 0 to 55% has been prepared by varying the gas compositional ratio. Data on the optical gap sub-gap absorption, and photo-to-dark conductivity ratio are used to evaluate the quality of the materials. An alloy a-Si0.75Ge0.25:H,F having Eg= 1.5 eV and Ds/s=10000 has been prepared by adding l% of GeH4 to SiF4 in the feed. (literal)
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