Ab initio study of structural, vibrational and dielectric properties of high-k HfO2 as a function of doping (Contributo in volume (capitolo o saggio))

Type

• Prodotto della ricerca (Classe)
• Contributo in volume (capitolo o saggio) (Classe)

Label

• Ab initio study of structural, vibrational and dielectric properties of high-k HfO2 as a function of doping (Contributo in volume (capitolo o saggio)) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/1757-899X/8/1/012021 (literal)

Alternative label

• Alberto Debernardi (2010)
  Ab initio study of structural, vibrational and dielectric properties of high-k HfO2 as a function of doping
  in FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING), 2010
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Alberto Debernardi (literal)

Pagina inizio

• 012021201 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 8 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• MDM National laboratory, via C.Olivetti 2 -20041 Agrate Brianza (MI), Italy (literal)

Titolo

• Ab initio study of structural, vibrational and dielectric properties of high-k HfO2 as a function of doping (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Muralt, P; Kosec, M; Raineri, V; Ravesi, S (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALBERTO DEBERNARDI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ALBERTO DEBERNARDI (Persona)