Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Duan, XM; Peressi, M; Baroni, S (2007)
  Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images
  
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Duan, XM; Peressi, M; Baroni, S (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 75 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Demokritos Natl Ctr Sci Res, CNR, INFM, Trieste, Italy; Univ Trieste, Dipartimento Fis Teor, I-34014 Trieste, Italy; Scuola Int Super Studi Avanzati, Trieste, Italy (literal)

Titolo

• Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images (literal)

Abstract

• Computer simulations of cross-sectional scanning-tunneling microscopy images of GaAs(110) are performed by means of density-functional theory, with the aim of characterizing In-Ga and N-As substitutional impurities. In some cases the comparison between an experimental image taken at a single negative bias with the results of our simulations is sufficient to discriminate among different types and locations of impurities. When ambiguities arise, a combined positive/negative scan of the same region will help resolve them. We find that In-Ga-N-As neighboring pairs are energetically favored relative to the isolated impurities. The main features of the images of these pairs are determined by the location of the nitrogen atoms, but details due to neighboring indium atoms are also meaningful and recognizable in the experimental images. (literal)

Prodotto di

• Teoria, simulazione e progetto assistito dal calcolatore di materiali nanostrutturati (MD.P06.025.001) (Modulo)
• Fluidi quantistici e sistemi elettronici fortemente correlati alla nanoscala e in dispositivi (MD.P06.024.001) (Modulo)

Autore CNR

• MARIA PERESSI (Persona)
• STEFANO BARONI (Persona)

Insieme di parole chiave

• Parole chiave di "Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• STEFANO BARONI (Persona)
• MARIA PERESSI (Persona)

Prodotto

• Teoria, simulazione e progetto assistito dal calcolatore di materiali nanostrutturati (MD.P06.025.001) (Modulo)
• Fluidi quantistici e sistemi elettronici fortemente correlati alla nanoscala e in dispositivi (MD.P06.024.001) (Modulo)

Insieme di parole chiave di

• Parole chiave di "Characterizing In and N impurities in GaAs from ab initio computer simulation of (110) cross-sectional STM images" (Insieme di parole chiave)