Giant permittivity and Maxwell-Wagner relaxation in Yb : CaTiO3 ceramics (Articolo in rivista)

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  • Giant permittivity and Maxwell-Wagner relaxation in Yb : CaTiO3 ceramics (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0022-3727/42/17/175407 (literal)
Alternative label
  • M. Viviani; M. Bassoli; V. Buscaglia; M. T. Buscaglia; P. Nanni (2009)
    Giant permittivity and Maxwell-Wagner relaxation in Yb : CaTiO3 ceramics
    in Journal of physics. D, Applied physics (Online); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Viviani; M. Bassoli; V. Buscaglia; M. T. Buscaglia; P. Nanni (literal)
Pagina inizio
  • 175407-1 (literal)
Pagina fine
  • 175407-8 (literal)
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  • http://puma.isti.cnr.it/linkres.php?resource=cnr.ieni/cnr.ieni.ge/2009-A0-020 (literal)
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  • 42 (literal)
Rivista
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  • In: Journal of Physics D-Applied Physics, vol. 42 (17) article n. 175407. IoP Publishing, 2009. (literal)
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  • 8 (literal)
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  • 17 (literal)
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  • ISI Web of Science (WOS) (literal)
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  • CNR-IENI, Genova; DICheP-UNIGE (literal)
Titolo
  • Giant permittivity and Maxwell-Wagner relaxation in Yb : CaTiO3 ceramics (literal)
Abstract
  • Yb-modified CaTiO3 ceramics sintered for 24 h at 1450 °C exhibit a giant apparent permittivity of about 10(4) with a remarkable temperature (30-300 K) and frequency (101-106 Hz) stability (maximum variation: ±20%). After a post-annealing treatment of 48 h at 1100 °C, the dielectric response is strongly modified, with a high frequency, low temperature permittivity corresponding to the intrinsic dielectric behaviour of CaTiO3. A step-like rise in the apparent permittivity and a complex dielectric behaviour is observed with increasing temperature. The overall dielectric response of the ceramics can be interpreted in terms of the Maxwell-Wagner interfacial relaxation and modelled using equivalent circuits. The analysis demonstrates that the as-sintered ceramic consists of semiconducting grains (resistivity <10(4) Omega cm at 300 K) and insulating grain boundaries (resistivity ~10(7) Omega cm at 300 K). Partial reoxidation takes place during post-annealing with the formation of oxygen gradients and increased electrical heterogeneity. In general, the dielectric response will be determined by the extent of the reoxidation reaction during cooling or post-annealing treatment below the sintering temperature. (literal)
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