Indium in silicon: interactions with native defects and with C impurities (Contributo in atti di convegno)

Type
Label
  • Indium in silicon: interactions with native defects and with C impurities (Contributo in atti di convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Alippi, P; La Magna, A; Scalese, S; Privitera, V (2004)
    Indium in silicon: interactions with native defects and with C impurities
    in Symposium on Silicon Front-End Junction Formation-Physics and Technology held at the 2004 MRS Spring Meeting, San Francisco, CA, APR 13-15, 2004
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alippi, P; La Magna, A; Scalese, S; Privitera, V (literal)
Pagina inizio
  • 281 (literal)
Pagina fine
  • 285 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 810 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)
Titolo
  • Indium in silicon: interactions with native defects and with C impurities (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 1-55899-760-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Pichler, P; Claverie, A; Lindsay, R; Orlowski, M; Windl, W (literal)
Abstract
  • Equilibrium geometries and formation energies of neutral and charged In complexes with silicon native defects (vacancy (V) and self-interstitials (I)) and with C impurities are investigated within density functional theory, using the Vienna Ab-initio Simulation Package. We determine formation energies and ionization levels of different complexes and discuss the contribution of I and V to indium diffusion. We also identify the In-C defect responsible for the increased electrical activation in In+C-doped silicon samples. The ab initio energetics is then implemented in a continuum diffusion code in order to simulate the diffusion of as-implanted In profiles under different thermal treatments. (literal)
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