Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes (Contributo in atti di convegno) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• La Magna, A; Alippi, P; Privitera, V; Fortunato, G; Camalleri, M; Svensson, B (2004)
  Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes
  in Symposium on Silicon Front-End Junction Formation-Physics and Technology held at the 2004 MRS Spring Meeting, San Francisco, CA, APR 13-15, 2004
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• La Magna, A; Alippi, P; Privitera, V; Fortunato, G; Camalleri, M; Svensson, B (literal)

Pagina inizio

• 223 (literal)

Pagina fine

• 228 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 810 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy STMicroelectronics, Catania Universityof Oslo (literal)

Titolo

• Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 1-55899-760-1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Pichler, P; Claverie, A; Lindsay, R; Orlowski, M; Windl, W (literal)

Abstract

• The simulation of laser annealing, applied to the formation of ultra-shallow junctions in Si, is discussed. Our effort is developing tools capable to aid the process integration issue. The numerical approach deals with a double problem: 1) the interaction between the irradiated transistor structure and the laser light, 2) the non-equilibrium evolution of the thermal field, molten regions and dopant density. Here we present a complete methodology: the calculated heat source distribution, induced by the irradiation, is used as input of a phase-field approach for the simulation of the thermal phase and impurity fields. We solved numerically the phase field equations in two dimensional structures, considering as an initial status the generic material modification due to an ion implant process. We present various simulation results obtained in MOS structures with different geometry. With the support of the simulation results we discuss the problematic and the perspectives of the excimer laser annealing process application in the fabrication of MOS devices. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• GUGLIELMO FORTUNATO (Persona)
• PAOLA ALIPPI (Persona)
• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)

Insieme di parole chiave

• Keywords of "Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• PAOLA ALIPPI (Persona)
• GUGLIELMO FORTUNATO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Insieme di parole chiave di

• Keywords of "Technology computer aided design of ultra-shallow junctions in Si devices formed by laser annealing processes" (Insieme di parole chiave)