CHEMICAL VAPOR DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET2)4 AS PRECURSOR (Articolo in rivista)

Type
Label
  • CHEMICAL VAPOR DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET2)4 AS PRECURSOR (Articolo in rivista) (literal)
Anno
  • 1995-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1051/jphyscol:1995561 (literal)
Alternative label
  • BASTIANINI A.; BATTISTON G.A.; GERBASI R.; PORCHIA M.; DAOLIO S. (1995)
    CHEMICAL VAPOR DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET2)4 AS PRECURSOR
    in Journal de physique. IV
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • BASTIANINI A.; BATTISTON G.A.; GERBASI R.; PORCHIA M.; DAOLIO S. (literal)
Pagina inizio
  • 525 (literal)
Pagina fine
  • 531 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Proceedings of the Tenth European Conference on Chemical Vapour Deposition (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://jp4.journaldephysique.org/articles/jp4/abs/1995/05/jp4199505C561/jp4199505C561.html (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 5 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1-4 : CNR,IST CHIM & TECNOL INORGAN & MAT AVANZATI,CORSO STATI UNITI 4,I-35127 PADUA,ITALY. / 5 : CNR,IST POLAROG & ELETTROCHIM PREPARAT,I-35127 PADUA,ITALY (literal)
Titolo
  • CHEMICAL VAPOR DEPOSITION OF ZRO2 THIN-FILMS USING ZR(NET2)4 AS PRECURSOR (literal)
Abstract
  • By using tetrakis(diethylamido) zirconium [Zr(NEt(2))(4)]. excellent quality ZrO2 thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580 degrees C and in the presence of oxygen. The as-grown films are colourless. smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO2 with a slight superficial contamination of hydrocarbons and nitrogen The films have a tapered polycrystalline columnar structure well risible in SEM micrographs. From X-ray diffraction analysis. the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia Under 550 degrees C the as-grown films resulted highly textured and were dominated by the (020) orientation. The films were annealed in the range 600-1000 degrees C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it