The Site of In Dopants in Si (Contributo in atti di convegno)

Type
Label
  • The Site of In Dopants in Si (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2644529 (literal)
Alternative label
  • F.d'Acapito,B.Golosio ,Y .Shimizu,S.Scalese,M.Italia,P .Alippi, S.Grasso (2007)
    The Site of In Dopants in Si
    in X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F.d'Acapito,B.Golosio ,Y .Shimizu,S.Scalese,M.Italia,P .Alippi, S.Grasso (literal)
Pagina inizio
  • 375 (literal)
Pagina fine
  • 377 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://proceedings.aip.org/resource/2/apcpcs/882/1/375_1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 882 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 882 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-INFM-OGGc/oESRF,GILDACRG.6RueJulesHorowitz,F-38043Grenoble(France) Strutt.Dip.diMatematicaeFisica,Universita'diSassari,ViaVienna2,1-07100Sassari,Italy InstituteofAppliedPhysics,UniversityofTsukuba1-1-1Tennodai,Tsukuba,Ibaraki305-8573,Japan CNR-IMM,StradalePrimosole50,1-95121Catania,Italy. (literal)
Titolo
  • The Site of In Dopants in Si (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Britt Hedman, Piero Pianetta (literal)
Abstract
  • The electrical properties of dopants in Si are of primary importance for the realization of electronic devices. Indium represents a promising p-type dopant whose electrical properties are improved by co-doping with C. From theoretical studies In and C are expected to pair in the Si matrix in order to lower the strain energy. In this contribution we provide the first direct experimental determination of the sites of In and In-C complexes in Si. The experiment is particularly challenging because, due to the low solubility of the impurity and to the high energy of the K edge, a particular experimental procedure is needed to separate the fluorescence signal from the substrate scattering. (literal)
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