Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.615-617.959 (literal)

Alternative label

• Iucolano, F; Roccaforte, F; Giannazzo, F; Di Franco, S; Moschetti, G; Puglisi, V; Raineri, V (2009)
  Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Iucolano, F; Roccaforte, F; Giannazzo, F; Di Franco, S; Moschetti, G; Puglisi, V; Raineri, V (literal)

Pagina inizio

• 959 (literal)

Pagina fine

• 962 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 615-617 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy ST Microelect, I-95121 Catania, Italy (literal)

Titolo

• Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces (literal)

Abstract

• The recent improvement of GaN material quality launched new perspective for its application in power devices. However, ion-implanted guard-ring edge terminations. necessary to improve the breakdown voltage, are not well developed as in SiC technology. Indeed, the effects of high-temperature annealing, required for the electrical activation of the implanted species in GaN, on the electrical behaviour of Schottky contact was not reported. In this work, the influence Of high temperature annealing (1150-1200 degrees C) on the Surface morphology of GaN and on the electrical behaviour of Schottky contact was Studied. Although the morphology of GaN Surface did not substantially change after annealing, a worsening of the electrical behaviour of Schottky contact was observed. This latter was ascribed to the formation of a high density of inter ace states after annealing. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• VITO RAINERI (Persona)
• SALVATORE DI FRANCO (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Keywords of "Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• SALVATORE DI FRANCO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Keywords of "Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces" (Insieme di parole chiave)