Origin of the C49-C54 volume anomaly in TiSi2 thin films: An in-situ XRD and TEM analysis (Articolo in rivista)

Type
Label
  • Origin of the C49-C54 volume anomaly in TiSi2 thin films: An in-situ XRD and TEM analysis (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Alternative label
  • Chenevier B., Chaix-Pluchery O., Matko I., Madar R., La Via F. (2002)
    Origin of the C49-C54 volume anomaly in TiSi2 thin films: An in-situ XRD and TEM analysis
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Chenevier B., Chaix-Pluchery O., Matko I., Madar R., La Via F. (literal)
Pagina inizio
  • 181 (literal)
Pagina fine
  • 187 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 64 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNRS (France), CNR-IMM (literal)
Titolo
  • Origin of the C49-C54 volume anomaly in TiSi2 thin films: An in-situ XRD and TEM analysis (literal)
Abstract
  • To analyze the origin of the C49-C54 volume anomaly in TiSi2 thin films, accurate thermal expansion coefficients were determined for both TiSi2 phases using in-situ X-ray diffraction. Between room temperature and 900 K, the C49 coefficients exhibit a clear anisotropy and the volume expansion is found to be larger in C54. This contributes to reduce the 2.0% volume difference usually observed at room temperature to 1.6% at the transformation temperature. The magnitude of the volume discontinuity during transformation is an indication of a first-order transition. At the C49-C54 transformation, TEM observations of annealed Ti/Si film capped with (111) TiN have shown that both phases coexist with a metal-rich third component indexed as Ti5Si3 and located beneath TiN. ¬© 2002 Elsevier Science B.V. All rights reserved. (literal)
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