Tuning of the electroluminescence from Si nanocrystals through the control of their structural properties (Contributo in atti di convegno)

Type
Label
  • Tuning of the electroluminescence from Si nanocrystals through the control of their structural properties (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • A. Irrera, F. Iacona, D. Pacifici, M. Miritello, G. Franzò, D. Sanfilippo, G. Di Stefano, P.G. Fallica, and F. Priolo (2003)
    Tuning of the electroluminescence from Si nanocrystals through the control of their structural properties
    in Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting, Boston, 2-5 Dicembre 2002
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Irrera, F. Iacona, D. Pacifici, M. Miritello, G. Franzò, D. Sanfilippo, G. Di Stefano, P.G. Fallica, and F. Priolo (literal)
Pagina inizio
  • 819 (literal)
Pagina fine
  • 824 (literal)
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  • Nanocrystalline Semiconductor Materials and Devices (literal)
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  • 737 (literal)
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  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy; 2CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy; 3STMicroelectronics, Stradale Primosole 50, I-95121 Catania, Italy (literal)
Titolo
  • Tuning of the electroluminescence from Si nanocrystals through the control of their structural properties (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • Victor I. Klimov, Jillian M. Buriak, Daniel D.M. Wayner, Francesco Priolo, Bruce White, Leonid Tsybeskov (literal)
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  • Victor I. Klimov, Jillian M. Buriak, Daniel D.M. Wayner, Francesco Priolo, Bruce White, Leonid Tsybeskov (literal)
Abstract
  • We have studied the structural, optical and electrical properties of MOS devices; where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma enhanced chemical vapor deposition. After deposition the SiOx samples were annealed at high temperature (> 1000degreesC) to induce the separation of the Si and SiO2 phases with the formation of Si nanocrystals embedded in the insulating matrix. The effects of the Si concentration in the SiOx layer and of the annealing temperature on the electrical and optical properties of these devices are reported and discussed. It is shown that by increasing the Si content in the SiOx layers the operating voltage of the device decreases and the total efficiency of emission increases. In fact, devices having an active layer with high Si concentration (46 at.%) annealed at 1100 degreesC, exhibit the best performances (i.e. the highest electroluminescence intensity and the lowest operating voltage). Furthermore, we have observed that by decreasing the thickness of the SiOx layer from 75 to 25 nm it is possible to strongly reduce the operating voltage down to 4 V. (literal)
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