Si nanocrystals as sensitizers for ErPL in SiO2 (Contributo in atti di convegno)

Type
Label
  • Si nanocrystals as sensitizers for ErPL in SiO2 (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • M. Forcales, M. Wojdak, M.A.J. Klik, T. Gregorkiewicz, O.B. Gusev, G. Franzò, D. Pacifici, F. Priolo, F. Iacona (2003)
    Si nanocrystals as sensitizers for ErPL in SiO2
    in Symposium on Optoelectronics of Group-IV-Based Materials held at the 2003 MRS Spring Meeting, San Francisco, 21-24 Aprile 2003
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Forcales, M. Wojdak, M.A.J. Klik, T. Gregorkiewicz, O.B. Gusev, G. Franzò, D. Pacifici, F. Priolo, F. Iacona (literal)
Pagina inizio
  • 119 (literal)
Pagina fine
  • 123 (literal)
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  • OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS (literal)
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  • 770 (literal)
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  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • Van der Waals - Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam, The Netherlands A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, I-95123 Catania, Italy CNR-IMM, Stradale Primosole 50, I-95121 Catania, Italy (literal)
Titolo
  • Si nanocrystals as sensitizers for ErPL in SiO2 (literal)
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  • T. Gregorkiewicz, R.G. Elliman, P.M. Fauchet, J.A. Hutchby (literal)
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  • T. Gregorkiewicz, R.G. Elliman, P.M. Fauchet, J.A. Hutchby (literal)
Abstract
  • Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pumping. We observed that the very efficient channel of erbium excitation introduced by the nanocrystals can be saturated when very high pulsed photon flux is used. While this channel is saturated, tuning to the resonant excitation wavelength results in an increase of erbium-related photoluminescence, indicating that direct and indirect excitations can take place simultaneously. (literal)
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