Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions (Articolo in rivista)

Type
Label
  • Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Condorelli G., Mauceri M., Pistone G., Perdicaro L.M.S., Abbondanza G., Portuese F., Valente G.L., Crippa D., Giannazzo F., La Via F. (2009)
    Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Condorelli G., Mauceri M., Pistone G., Perdicaro L.M.S., Abbondanza G., Portuese F., Valente G.L., Crippa D., Giannazzo F., La Via F. (literal)
Pagina inizio
  • 127 (literal)
Pagina fine
  • 130 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 600-603 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ETC, LPE, CNR-IMM (literal)
Titolo
  • Thin SiC-4H epitaxial layer growth by trichlorosilane (TCS) as silicon precursor with very abrupt junctions (literal)
Abstract
  • A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen (N 2) and trimethylaluminum (TMA) as doping source. The SIMS and SCM analysis show that using this silicon precursor very abrupt N ++/P+/N+ junctions (40-60 nm) can be obtained with low background doping concentration in a single epitaxial growth run. ¬© (2009) Trans Tech Publications, Switzerland. (literal)
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