Erbium doped materials for a Si-based microphotonics (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Erbium doped materials for a Si-based microphotonics (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• F. Priolo, G. Franzò, A. Irrera, F. Iacona, M. Miritello, R. Lo Savio, and E. Pecora (2008)
  Erbium doped materials for a Si-based microphotonics
  in Diffusion and defect data, solid state data. Part B, Solid state phenomena
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• F. Priolo, G. Franzò, A. Irrera, F. Iacona, M. Miritello, R. Lo Savio, and E. Pecora (literal)

Pagina inizio

• 563 (literal)

Pagina fine

• 570 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 131-133 (literal)

Rivista

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dipartmento Fis & Astron, I-95123 Catania, Italy. CNR-IMM, Via S. Sofia 64, I-95123 Catania, Italy (literal)

Titolo

• Erbium doped materials for a Si-based microphotonics (literal)

Abstract

• We have investigated the role of the Si excess on the photoluminescence proper-ties of Er doped substoichiometric SiOx layers. We demonstrate that the Si excess has two competing roles: when agglomerated to form Si nanoclusters (Si-nc) it enhances the Er excitation efficiency but it also introduces new non-radiative decay channels. When Er is excited through an energy transfer from Si-ne, the beneficial effect on the enhanced excitation efficiency prevails and the Er emission increases with increasing Si content. Nevertheless the maximum excited Er fraction is only of the order of percent. In order to increase the concentration of excited Er ions, a different approach based on Er silicate thin film has been explored. Under proper annealing conditions, an efficient luminescence at 1535 nm is found and all of the Er ions in the material is optically active. The possibility to efficiently excite Er ions also through electron-hole mediated processes is demonstrated in nanometer-scale Er-Si-O/Si multilayers. These data are presented and discussed. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIORGIA FRANZO' (Unità di personale interno)
• MARIA PILAR MIRITELLO (Unità di personale interno)
• ALESSIA IRRERA (Persona)
• FABIO SANTO IACONA (Persona)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• ALESSIA IRRERA (Persona)
• FABIO SANTO IACONA (Persona)
• MARIA PILAR MIRITELLO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)