Local order around Er3+ ions in thin silicon oxide layers grown in Si by MBE (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Local order around Er3+ ions in thin silicon oxide layers grown in Si by MBE (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• F. D'Acapito, S. Mobilio, A. Terrasi, S. Scalese, G. Franzò and F. Priolo (2005)
  Local order around Er3+ ions in thin silicon oxide layers grown in Si by MBE
  in Physica scripta (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• F. D'Acapito, S. Mobilio, A. Terrasi, S. Scalese, G. Franzò and F. Priolo (literal)

Pagina inizio

• 384 (literal)

Pagina fine

• 386 (literal)

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• T115 (literal)

Rivista

• Physica scripta (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• ESRF, GILDA CRG, INFM, OGG, BP 220, F-38043 Grenoble, France. Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy Univ Catania, Dipartimento Fis, I-95129 Catania, Italy Univ Catania, INFM, I-95129 Catania, Italy Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Roma, Italy (literal)

Titolo

• Local order around Er3+ ions in thin silicon oxide layers grown in Si by MBE (literal)

Abstract

• Er doped Si represent an interesting class of materials for the realization of light emitting devices based on Si technology. The local structure around Er ions is known to strongly affect the luminescence properties of the Rare Earth. In this work the Er site in Er + O doped silicon samples prepared by Molecular Beam Epitaxy has been investigated by X-ray Absorption Spectroscopy at the Er L-III edge. Samples with different preparation parameters such as the O/Er ratio and thermal treatments were investigated. Data were fitted using a model consisting in a first shell of O atoms and a second shell of Si atoms and accounting for multiple scattering effects. The rare earth is found to be linked to 5-6 O atoms at around 2.23 angstrom whereas a well defined Er-O-Si bond angle of approximate to 136 deg is evidenced. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIORGIA FRANZO' (Unità di personale interno)
• FRANCESCO D'ACAPITO (Persona)
• SILVIA SCALESE (Persona)

Incoming links:

Autore CNR di

• GIORGIA FRANZO' (Unità di personale interno)
• SILVIA SCALESE (Persona)
• FRANCESCO D'ACAPITO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica scripta (Rivista)