Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition (Contributo in atti di convegno) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• R. Lo Nigro, R.G. Toro, G. Malandrino, V. Raineri, I.L.Fragalà (2004)
  Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition
  in Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting, San Francisco, CA, APR 13-16, 2004
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• R. Lo Nigro, R.G. Toro, G. Malandrino, V. Raineri, I.L.Fragalà (literal)

Pagina inizio

• 299 (literal)

Pagina fine

• 304 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• NTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 811 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 811 (literal)

Rivista

• Materials Research Society symposia proceedings (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM-CNR, Sez Catania, I-95121 Catania, Italy Dip Scienze Chimiche, I-95125 Catania, Italy (literal)

Titolo

• Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 1-55899-761-X (literal)

Abstract

• We report the results of a recent study on the deposition of praseodymium oxides thin films on silicon substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). A suited Pr(III) beta-diketonate precursor has been used as the metal source and the deposition conditions have been carefully selected because of a large variety of possible Pro(2-x) (x= 0-0.5) phases. Pr2O3 films have been obtained in a hot-wall MOCVD reactor under non oxidising ambient at 750degreesC deposition temperature. The structural and morphological characteristics of Pr2O3 films have been carried out by X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). Chemical compositional studies have been performed by X-ray photoelectron spectroscopic (XPS) analysis and a fully understanding of the MOCVD process has been achieved. Preliminary electrical measurements point to MOCVD as a reliable growth technique to obtain good quality praseodymium oxide based films. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Research Society symposia proceedings (Rivista)