Superconducting device with transistor-like properties including large current amplification (Articolo in rivista)

Type
Label
  • Superconducting device with transistor-like properties including large current amplification (Articolo in rivista) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.127005 (literal)
Alternative label
  • G.P. Pepe, G. Ammendola, G. Peluso, A. Barone, L. Parlato, E. Esposito, R. MONACO, and N.E. Booth (2000)
    Superconducting device with transistor-like properties including large current amplification
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G.P. Pepe, G. Ammendola, G. Peluso, A. Barone, L. Parlato, E. Esposito, R. MONACO, and N.E. Booth (literal)
Pagina inizio
  • 447 (literal)
Pagina fine
  • 449 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apl.aip.org.globalproxy.cvt.dk/resource/1/applab/v77/i3/p447_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 77 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Naples Federico II, INFM, Dipartimento Sci Fis, I-80125 Naples, Italy. Univ Naples 2, Dipartimento Ingn Informaz, Aversa, CE, Italy. CNR, Ist Cibernet, I-80125 Naples, Italy. Univ Oxford, Dept Phys, Oxford OX1 3RH, England (literal)
Titolo
  • Superconducting device with transistor-like properties including large current amplification (literal)
Abstract
  • We have fabricated and studied a stacked superconducting double tunnel junction device with transistor-like properties. The intermediate electrode is a bilayer consisting of a Nb film together with an Al film that acts as a quasiparticle trap. Large current gains of more than 50 are observed at 4.2K when the Al layer is normal. The operation is highly directional. Results are explained on the basis of trapping of quasiparticles from a superconductor into a normal metal, together with a conversion of relaxation energy into electronic excitations. Similar devices should have wide applications in low-temperature measurement and detection systems. (literal)
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