Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/TED.2012.2206596 (literal)

Alternative label

• D. Corso, S. Libertino, M. Lisiansky, Y. Roizin, F. Palumbo, F. Principato, C. Pace, P. Finocchiaro, and S. Lombardo (2012)
  Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation
  in I.E.E.E. transactions on electron devices
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• D. Corso, S. Libertino, M. Lisiansky, Y. Roizin, F. Palumbo, F. Principato, C. Pace, P. Finocchiaro, and S. Lombardo (literal)

Pagina inizio

• 2597 (literal)

Pagina fine

• 2602 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 59 (literal)

Rivista

• I.E.E.E. transactions on electron devices (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi, National Council of Research (CNR), 95121 Catania, Italy Tower Semiconductor, Migdal Haemek 23105, Israel Consejo Nacional de Investigaciones Científicas y Técnicas-Comision Nacional de Energia Atomica, Buenos Aires 1650, Argentina Department of Physics, University of Palermo, 90128 Palermo, Italy Department of Electronics, Computer Science and Systems, University of Calabria, 87036 Rende, Italy Laboratori Nazionali del Sud, Istituto Nazionale di Fisica Nucleare, 95100 Catania, Italy (literal)

Titolo

• Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation (literal)

Abstract

• Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distribution can be obtained, thus providing a predictive model of the radiation tolerance of NROM memory arrays. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi Dispositivi di Silicio Oltre il CMOS Scaling (MD.P05.023.001) (Modulo)

Autore CNR

• DOMENICO CORSO (Persona)
• SALVATORE LOMBARDO (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SEBANIA LIBERTINO (Unità di personale interno)
• SALVATORE LOMBARDO (Persona)
• DOMENICO CORSO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi Dispositivi di Silicio Oltre il CMOS Scaling (MD.P05.023.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• I.E.E.E. transactions on electron devices (Rivista)

Insieme di parole chiave di

• Parole chiave di "Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation" (Insieme di parole chiave)