Preparation of n- and p-InP Films by PH3 Treatment of Electrodeposited In Layers (Articolo in rivista)

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Label
  • Preparation of n- and p-InP Films by PH3 Treatment of Electrodeposited In Layers (Articolo in rivista) (literal)
Anno
  • 1995-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/1.2044162 (literal)
Alternative label
  • Cattarin S.; Musiani M.M.; Casellato U.; Rossetto R.; Razzini G.; Decker F.; Scrosati B. (1995)
    Preparation of n- and p-InP Films by PH3 Treatment of Electrodeposited In Layers
    in Journal of the Electrochemical Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cattarin S.; Musiani M.M.; Casellato U.; Rossetto R.; Razzini G.; Decker F.; Scrosati B. (literal)
Pagina inizio
  • 1267 (literal)
Pagina fine
  • 1272 (literal)
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  • http://jes.ecsdl.org/content/142/4/1267 (literal)
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  • 142 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1,2 : CNR,IST POLAROG & ELETTROCHIM PREPARAT,I-35100 PADUA,ITALY. 3,4 : CNR,IST CHIM & TECNOL INORGAN & MAT AVANZATI,I-35100 PADUA,ITALY 5 : POLITECN MILAN,DIPARTIMENTO CHIM FIS APPL,I-20131 MILAN,ITALY 6,7 : UNIV ROMA LA SAPIENZA,DIPARTIMENTO CHIM,I-00185 ROME,ITALY (literal)
Titolo
  • Preparation of n- and p-InP Films by PH3 Treatment of Electrodeposited In Layers (literal)
Abstract
  • Thin InP layers have been prepared by electrodeposition of In films on Ti substrates (ca. 2 mg cm(-2) of In) and their annealing in PH3 flow. The obtained material, characterized by scanning electron microscopy-energy dispersive x-ray analysis and x-ray diffraction techniques, shows uneven substrate coverage but good crystallinity. Photoelectrochemical investigations in acidic polyiodide medium show significant n-type photoactivity for the samples prepared from a nominally pure In layer. A p-type photoactivity is obtained depositing a small amount of Zn on top of the In layer prior to annealing. Results are compared with those obtained preparing InP layers on Ti by a conventional metallorganic chemical vapor deposition technique. (literal)
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