In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime (Articolo in rivista) (literal)

Anno

• 1998-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1149/1.1838292 (literal)

Alternative label

• Cattarin S.; Chazalviel J.-N.; Da Fonseca C.; Ozanam F.; Peter L.M. ; Schlichtorl G.; Stumper J. (1998)
  In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime
  in Journal of the Electrochemical Society
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cattarin S.; Chazalviel J.-N.; Da Fonseca C.; Ozanam F.; Peter L.M. ; Schlichtorl G.; Stumper J. (literal)

Pagina inizio

• 498 (literal)

Pagina fine

• 502 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://jes.ecsdl.org/content/145/2/498 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 145 (literal)

Rivista

• Journal of the Electrochemical Society (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 : Ist. Polarografia ed E., C. N. R., 35100 Padova, Italy / 2,3,4 : Lab. de Phys. de la Matiere Cond., CNRS-Ecole Polytechnique, 91128 Palaiseau Cedex, France / 5,6,7 : School of Chemistry, University of Bath, Bath BA2 7AY, United Kingdom / 2,3,5 : Electrochemical Society / 3 : INEB-MAT, 4150 Porto, Portugal / 6 : National Renewable Energy Laboratory, Golden, CO, United States / 7 : Ballard Power Systems, Burnaby, BC V5J5J9, Canada (literal)

Titolo

• In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime (literal)

Abstract

• Several physicochemical properties of the p-Si/NH4F interface have been monitored by in situ techniques in the regime of current oscillations. Comparison of evolution of infrared absorption, microwave reflectivity, electrode admittance, hydrogen evolution, and electron injection rate shows interesting correlations. An integrated description of the processes involved is attempted on the basis of the current models for the Si/acidic fluoride interface. (literal)

Prodotto di

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)

Autore CNR

• SANDRO CATTARIN (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)

Autore CNR di

• SANDRO CATTARIN (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the Electrochemical Society (Rivista)

Insieme di parole chiave di

• Parole chiave di "In-situ Characterization of the p-Si/NH4F Interface during Dissolution in the Current Oscillations Regime" (Insieme di parole chiave)