http://www.cnr.it/ontology/cnr/individuo/prodotto/ID217576
Silicon Carbide Epitaxy (Curatela)
- Type
- Label
- Silicon Carbide Epitaxy (Curatela) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatori
- Francesco La Via (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- Silicon Carbide Epitaxy (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-81-308-0500-9 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#tipoDiCuratela
- Abstract
- Recently there are been numerous books written on SiC, which is a
demonstration of the importance of this material and its potential impact on
society. The majority of these books attempt to cover all the aspects of the
technology from the growth, to the processing and the devices. In this book,
instead, we will focalize on the epitaxial growth of 4H silicon carbide and on
the hetero-epitaxial growth of 3C-SiC on different substrates. I think, in fact,
that in the last ten years a large evolution of the epitaxial and hetero-epitaxial
processes of silicon carbide has been made. The introduction of chloride
precursors, the epitaxial growth on large area substrate with low defect
density, the improvement of the surface morphology, the understanding of
the CVD reactions and epitaxial mechanisms by advanced simulations are
just the main results obtained in the homo-epitaxy process of 4H-SiC. Also in
the hetero-epitaxy process of 3C-SiC on different substrates several important
steps have been made. A more advanced knowledge on the strain formation
during epitaxial growth and on the evolution of different defects has
produced a large improvement of the material grown on silicon or on the
hexagonal polytipes.
After this large progress in the process of SiC epitaxial growth it is time
to collect this knowledge in an e-book that can be easily accessible from all
the silicon carbide community and that can be a reference point for the future
work in this interesting field. Then I have decided to contact all the major
experts of this field to write ten chapters on the growth, defects reduction and
simulations of both 4H-SiC and 3C-SiC.
The structure of the book is the following. After an introduction chapter
on the evolution and history of the epitaxial growth of 4H-SiC on large area
substrate, the introduction of chlorinated precursors in the epitaxial process is
reviewed and explained in detail and the effect of this new process on
Schottky diodes characteristics is shown. The improvement of the epitaxy
process is strictly related to the improvement of the simulation of the growth
that helps the researchers to understand the effect of different parameters on
this complex process. Then the third chapter is dedicated to the simulations of
the CVD systems, the reaction in the gas phase of the different precursors and
the surface reaction models. The fourth chapter shows some important results
obtained by simulation on the study of different growth parameters that
influence the formation of defects and their evolution both on 4H-SiC and
3C-SiC. Some of these defects and the reduction of costs focus the research
toward the reduction of the off-axis angle and finally to growth on an on-axis
substrate. Then a chapter is dedicated to this important aspect of the growth
and shows all the difficulties and the parameters of the epitaxy process that
should be changed to obtain a good material on these substrates. Both
homoepitaxy (4H on 4H) and heteroepitaxy (3C on hexagonal substrate) are
addressed. Finally the section on the homo-epitaxy of 4H-SiC is finished with
a chapter that explain the influence of different process parameters on the
formation or the reduction of the principal defects that are observed in the
epitaxial layers.
The section on the hetero-epitaxy of 3C-SiC starts with a chapter on the
growth of 3C-SiC on large area silicon wafers. In this chapter it is described
the typical process and the defects and strain that are generated during the
growth on this substrate. After this introduction chapter to the hetero-epitaxy
problematic, the next chapter show a possible approach for the realization of
a bulk 3C-SiC growth by CVD. In this chapter it is shown the effect of
different type of defects on the devices and several techniques to reduce this
defects to a level compatible with the devices realization. While in the two
previous chapters the hetero-epitaxy is realized on a silicon substrate, in the
ninth chapter the process is realized on a hexagonal SiC politype. In this way
the lattice and thermal mismatch is reduced but is also reduced the diameter
of the wafer and the cost of the final wafer is greatly increased. Furthermore
in this way only (111) 3C-SiC can be obtained and this can be a problem for
the realization of MOSFET devices. Finally, in the last chapter of the e-book,
an interesting application of the 3C-SiC material is presented in the field of
advanced biomedical devices that could be one of the most interesting
applications of 3C-SiC. (literal)
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