http://www.cnr.it/ontology/cnr/individuo/prodotto/ID217536
Fast growth rate epitaxy by chloride precursors (Contributo in volume (capitolo o saggio))
- Type
- Label
- Fast growth rate epitaxy by chloride precursors (Contributo in volume (capitolo o saggio)) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Francesco La Via (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- Silicon Carbide Epitaxy (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- Fast growth rate epitaxy by chloride precursors (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-81-308-0500-9 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- Francesco La Via (literal)
- Abstract
- In this chapter the epitaxial process with chloride precursors has been described and the main parameters (Si/H2, C/Si, Cl/Si, growth rate) that influence the growth and the quality of the epitaxial layer have been discussed in detail. In particular it has been shown that the growth rate can be increased to about 100 m/h but higher growth rate can be difficult to reach due to the limited surface diffusion at the usual temperature of SiC epitaxy. Furthermore from the experimental results it seems that at least a Cl/Si ratio equal to 2 should be used to obtain a good surface morphology and a low density of point defects. Increasing the growth rate also the C/Si ratio should be changed in order to obtain a good surface morphology and a low density of defects. Finally this process gives the opportunity to reduce several kind of defects (Basal Plane Dislocations and Stacking Faults) and to decrease the surface roughness at the same time. (literal)
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