High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers (Articolo in rivista)

Type
Label
  • High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/2.014111esl (literal)
Alternative label
  • Canino, A., Camarda, M., La Via, F. (2011)
    High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers
    in Electrochemical and solid-state letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Canino, A., Camarda, M., La Via, F. (literal)
Pagina inizio
  • H457 (literal)
Pagina fine
  • H459 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 14 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • High power density UV optical stress for quality evaluation of 4H-SiC epitaxial layers (literal)
Abstract
  • We present a characterization technique to assess the quality of 4H-SiC CVD growth process based on optical methods. The setup allows characterizing the epilayer and the substrate at the same time, leading to a self-consistent determination of the epitaxial layer quality with respect to the substrate. By using high power density UV optical pumping to stress 4H-SiC epitaxial layers, we are able to check the generation and evolution of Single Shockley faults on large areas, without fabricating bipolar junctions. This characterization technique is a fast and non-destructive method to compare the quality of different 4H-SiC CVD growth process. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it