Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling (Articolo in rivista)

Type
Label
  • Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.711.55 (literal)
Alternative label
  • Camarda, M., Piluso, N., Anzalone, R., La Magna, A., La Via, F. (2012)
    Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Camarda, M., Piluso, N., Anzalone, R., La Magna, A., La Via, F. (literal)
Pagina inizio
  • 55 (literal)
Pagina fine
  • 60 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 711 (literal)
Rivista
Note
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • Strain field analysis of 3C-SiC free-standing microstructures by micro-Raman and theoretical modelling (literal)
Abstract
  • In this article we compare the strain distribution observed in 3C-SiC/Si(100) cantilevers, using the shift of the transverse optical (TO) mode in micro-Raman maps, with the values predicted using a recent analytic theory [1]. By taking advantage of an under etching of the microstructures during the fabrication processes, that removes a thin layer of highly defective SiC close to the film/substrate interface near the edges of the microstructures, we show that the variation of the experimental measured strain can be ascribed to a non-linearity of the strain field along the 3C-SiC film thickness. (literal)
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