Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications (Articolo in rivista)

Type
Label
  • Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.717-720.517 (literal)
Alternative label
  • Camarda, M. and Anzalone, R. and Piluso, N. and Severino, A. and Canino, A. and La Via, F. and La Magna, A. (2012)
    Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Camarda, M. and Anzalone, R. and Piluso, N. and Severino, A. and Canino, A. and La Via, F. and La Magna, A. (literal)
Pagina inizio
  • 517 (literal)
Pagina fine
  • 520 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 717-720 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM (literal)
Titolo
  • Extended characterization of the stress fields in the heteroepitaxial growth of 3C-SiC on silicon for sensors and device applications (literal)
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Autore CNR

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